SQ2319ADS-T1_GE3

Vishay Siliconix SQ2319ADS-T1_GE3

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  • SQ2319ADS-T1_GE3
  • Vishay Siliconix
  • MOSFET P-CH 40V 4.6A SOT23-3
  • Transistors - FETs, MOSFETs - Single
  • SQ2319ADS-T1_GE3 Datasheet
  • TO-236-3, SC-59, SOT-23-3
  • -Reel®
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1393
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SQ2319ADS-T1_GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 40V 4.6A SOT23-3
Package
-Reel®
Series
Automotive, AEC-Q101, TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Tc)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Tc)
Rds On (Max) @ Id, Vgs
75mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
620 pF @ 20 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V

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Vishay Siliconix
Vishay Siliconix
In 1996, Vishay Siliconix became a part of Vishay. Vishay Siliconix is a company that manufactures semiconductor devices and integrated circuits. Vishay Siliconix products mainly include high-performance power MOSFETs, insulated gate bipolar transistors, power...
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