WG50N65DHWQ

WeEn Semiconductors WG50N65DHWQ

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  • WG50N65DHWQ
  • WeEn Semiconductors
  • IGBT TRENCH FD ST 650V 91A TO247
  • Transistors - IGBTs - Single
  • WG50N65DHWQ Datasheet
  • TO-247-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 14118
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
WG50N65DHWQ
Category
Transistors - IGBTs - Single
Manufacturer
WeEn Semiconductors
Description
IGBT TRENCH FD ST 650V 91A TO247
Package
Tube
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Power - Max
278 W
Input Type
Standard
Reverse Recovery Time (trr)
105 ns
Current - Collector (Ic) (Max)
91 A
Voltage - Collector Emitter Breakdown (Max)
650 V
IGBT Type
Trench Field Stop
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 50A
Gate Charge
160 nC
Td (on/off) @ 25°C
66ns/163ns
Test Condition
400V, 50A, 10Ohm, 15V
Current - Collector Pulsed (Icm)
200 A
Switching Energy
1.7mJ (on), 600µJ (off)

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WeEn Semiconductors
WeEn Semiconductors
WeEn Semiconductors Co., Ltd was registered as a company on August 5, 2015. WeEn's global footprint includes operating headquarters in Shanghai, and wholly-owned subsidiaries and centers in Jilin and Hong Kong, Northeast China (front-end manufacturing),...
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